A callibration process of the EBL exposition field
Student: Ladislav Tuska
Supervisor: Ing. Vladimir Kolarik, PhD.
This bachelor work is engaged in electron-beam lithography, which is used to generate geometrical patterns with submicron details. Geometrical precision of prepared structures is mainly affected by deflection lens - its geometrical and electrical precision and stability. High-precision exposition needs a calibration process, which consists of testing structure exposition, deviation measurements, calibration calculations, and second (verifying) exposition. This bachelor work falls into the grant GAČR - S2065014 "Electron-beam lithography for submicron relief diffractive sttructures".
Figure: Merasured geometrical distortion of the rectangular exposition field.
